Precision measurement of Compton scattering in silicon with a skipper CCD for dark matter detection
We report a precision measurement of Compton scattering on silicon atomic shell electrons down to 23eV. A skipper charge-coupled device (CCD) with single-electron resolution, developed for the DAMIC-M experiment, was exposed to a 241Am γ-ray source over several months. Features associated with the silicon K, L1, and L2,3-shells are clearly identified, and scattering on valence electrons is detected for the first time below 100eV. We find that the relativistic impulse approximation for Compton scattering, which is implemented in Monte Carlo simulations commonly used by direct detection experiments, does not reproduce the measured spectrum below 0.5keV. The data are in better agreement with ab initio calculations originally developed for X-ray absorption spectroscopy.